frequency multipliers - active - chip 2 2 - 50 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc578 gaas mmic x2 active frequency multiplier, 24 - 33 ghz output v00.0506 general description features functional diagram electrical speci cations, t a = +25 c, vdd1, vdd2 = 5v, 3 dbm drive level typical applications the hmc578 is suitable for: ? clock generation applications: sonet oc-192 & sdh stm-64 ? point-to-point & vsat radios ? test instrumentation ? military ew / radar ? space the hmc578 die is a x2 active broadband frequency multiplier utilizing gaas phemt technology. when driven by a +3 dbm signal, the multiplier provides +17 dbm typical output power from 24 to 33 ghz. the fo and 3fo isolations are >25 dbc and >36 dbc respectively at 28 ghz. the hmc578 is ideal for use in lo multiplier chains for pt to pt & vsat radios yielding reduced parts count vs. traditional approaches. the low additive ssb phase noise of -132 dbc/hz at 100 khz offset helps maintain good system noise performance. high output power: +17 dbm low input power drive: 0 to +6 dbm fo isolation: >25 dbc @ fout= 28 ghz 100 khz ssb phase noise: -132 dbc/hz single supply: +5v@ 81 ma die size: 1.18 x 1.23 x 0.1 mm parameter min. typ. max. units frequency range, input 12 - 16.5 ghz frequency range, output 24 - 33 ghz output power 12 17 dbm fo isolation (with respect to output level) 22 dbc 3fo isolation (with respect to output level) 30 dbc input return loss 10 db output return loss 15 db ssb phase noise (100 khz offset) -132 dbc/hz supply current (idd1 & idd2) 81 ma
frequency multipliers - active - chip 2 2 - 51 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output power vs. temperature @ 3 dbm drive level output power vs. supply voltage @ 3 dbm drive level output power vs. drive level output power vs. input power isolation @ 3 dbm drive level 0 5 10 15 20 25 22 23 24 25 26 27 28 29 30 31 32 33 34 35 +25c +85c -55c output power (dbm) output frequency (ghz) hmc578 gaas mmic x2 active frequency multiplier, 24 - 33 ghz output v00.0506 -20 -10 0 10 20 22 23 24 25 26 27 28 29 30 31 32 33 34 35 fo 2fo 3fo output power (dbm) output frequency (ghz) -20 -15 -10 -5 0 5 10 15 20 25 -10-8-6-4-20246810 24ghz 28ghz 33ghz output power (dbm) input power (dbm) 0 5 10 15 20 25 22 23 24 25 26 27 28 29 30 31 32 33 34 35 vdd=4.5v vdd=5.0v vdd=5.5v output power (dbm) output frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 22 23 24 25 26 27 28 29 30 31 32 33 34 35 -6dbm -4dbm -2dbm 0dbm 2dbm 4dbm 6dbm output power (dbm) output frequency (ghz)
frequency multipliers - active - chip 2 2 - 52 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature -30 -25 -20 -15 -10 -5 0 22 23 24 25 26 27 28 29 30 31 32 33 34 35 +25c +85c -55c output return loss (db) frequency (ghz) -20 -15 -10 -5 0 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 +25c +85c -55c input return loss (db) frequency (ghz) hmc578 gaas mmic x2 active frequency multiplier, 24 - 33 ghz output v00.0506
frequency multipliers - active - chip 2 2 - 53 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings outline drawing rf input (vdd = +5v) +13 dbm supply voltage (vdd1, vdd2) +6.0 vdc channel temperature 175 c continuous pdiss (t= 85 c) (derate 7.8 mw/c above 85 c) 703 mw thermal resistance (channel to die bottom) 128 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions are in inches [millimeters]. 2. die thickness is .004 3. typical bond pad is .004 square. 4. typical bond spacing is .006 center to center. 5. bond pad metalization: gold 6. backside metalization: gold 7. backside metal is ground. 8. no connection required for unlabeled bond pads. typical supply current vs. vdd vdd (v) idd (ma) 4.5 81 5.0 81 5.5 81 note: multiplier will operate over full voltage range shown above. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate [2] gp-2 (gel pack) [1] refer to the packaging information section for die packaging dimensions. [2] reference this suffix only when ordering alternate die packaging. hmc578 gaas mmic x2 active frequency multiplier, 24 - 33 ghz output v00.0506
frequency multipliers - active - chip 2 2 - 54 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram pad number function description interface schematic 1, 2 vdd1, vdd2 supply voltage 5v 0.5v. 3rfout pin is ac coupled and matched to 50 ohms from 24 - 33 ghz. 4, 5 gnd die bottom must be connected to rf ground. 6rfin pin is ac coupled and matched to 50 ohms from 12 - 16.5 ghz. pad description hmc578 gaas mmic x2 active frequency multiplier, 24 - 33 ghz output v00.0506
frequency multipliers - active - chip 2 2 - 55 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. c and a tool temperature of 265 deg. c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. c. do not expose the chip to a temperature greater than 320 deg. c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc578 v00.0506 gaas mmic x2 active frequency multiplier, 24 - 33 ghz output
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